| PART |
Description |
Maker |
| K7A803600B-QC14 K7A803600B-QC16 K7A803609B K7A8036 |
256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM 256Kx36
256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM
256Kx36 & 512Kx18 SRAM
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| K7A803601M K7A801801M K7A801809B K7A803609B |
256Kx36 & 512Kx18 Synchronous SRAM
256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM
256K x 36 & 512K x 18-Bit Synchronous Pipelined Burst SRAM Data Sheet
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| K7B803625B K7B801825B |
256Kx36 & 512Kx18 Synchronous SRAM
|
Samsung semiconductor
|
| KM718V987 |
(KM736V887 / KM718V987) 256Kx36 & 512Kx18 Synchronous SRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K7M801825B K7M803625B06 |
256Kx36 & 512Kx18 Flow-Through NtRAM
|
Samsung semiconductor
|
| K7M801825A K7M803625A |
256Kx36 & 512Kx18 Flow-Through NtRAM TM
|
Samsung semiconductor
|
| K7M801825M |
256Kx36 & 512Kx18 Flow-Through NtRAMData Sheet
|
Samsung Electronic
|
| KM736V889 |
256Kx36 Synchronous SRAM(256Kx36位同步静RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| KM736S849 |
256Kx36 Synchronous SRAM(256Kx36位同步静RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K7N801801A |
512Kx18-Bit Pipelined NtRAMData Sheet
|
Samsung Electronic
|
| HYB39S16400AT-10 HYB39S16400AT-8 Q67100-Q1333 Q671 |
16 MBit Synchronous DRAM 4M X 4 SYNCHRONOUS DRAM, 8 ns, PDSO44
16 MBit Synchronous DRAM 2M X 8 SYNCHRONOUS DRAM, 10 ns, PDSO44
Multipole Connector 1M X 16 SYNCHRONOUS DRAM, 10 ns, PDSO50
DB25PH 16兆位同步DRAM
16 MBit Synchronous DRAM 16兆位同步DRAM
|
Siemens Semiconductor Group
SIEMENS AG
|
